The main goal of the project is to investigate the influence of plasma discharge parameters in inductively coupled conditions on etch performance and quality of  LiNbO3 based PIC structures.  Simulation and modeling methods will be implemented to simulate the plasma process and to predict the etch trends and results. In addition, this project also includes etch mask selection and test structure design and test vehicle characterization. The final goal is the minimization of optical losses while simultaneously reducing PIC device footprint. In particular, the developed LNOI etching process should demonstrate: 
1. Control of etch depth and width (CD), i.e., profile angle controls insertion loss. 
2. Smooth sidewalls, that help minimize propagation losses. 
3.    Vertical sidewalls, that enable tighter bend radius and smaller footprint. 
4. Up-scaling of the process to 200 mm wafers. 

The etch process performance will be characterized by various available techniques including XPS, AFM, and SEM. The optical losses will also serve as an important figure of merit for fabricated PIC test structures. 

The research will involve:

• Working in the ISO5 clean room environment 
• Performing experimental work on Plasma etching equipment
• Performing characterization
• Design of experiments
• Participation in plasma process simulation and modeling
• Writing reports and scientific papers
• Conference participation