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Microsystems based on piezoelectric transduction are an important class of microelectromechanical systems (MEMS). Upon other material properties, a high crystalline quality of the involved thin films incl. electrodes and piezoelectrics is essential for a proper device performance.
This project investigates the use of plasma-enhanced atomic layer deposition (PEALD) to develop seed and buffer layers of III/V nitrides within thin film stacks for piezo MEMS. It covers the process development for PEALD of III/V nitride binary and ternary compounds (saturation curves, influence of temperature, precursor choice, plasma characteristics etc.), in-depth thin film characterization such as XRD, SE, AFM, SEM to access the structural, morphological, and electrical properties, and investigation of the performance of the PEALD seed layers compared to PVD techniques. The work is performed on an industrial scale cluster tool encompassing PEALD and PVD modules.
The project aims to demonstrate PEALD as an effective method for creating high-quality III/V nitride seed layers, significantly enhancing the performance and reliability of piezoelectric MEMS.
This project investigates the use of plasma-enhanced atomic layer deposition (PEALD) to develop seed and buffer layers of III/V nitrides within thin film stacks for piezo MEMS. It covers the process development for PEALD of III/V nitride binary and ternary compounds (saturation curves, influence of temperature, precursor choice, plasma characteristics etc.), in-depth thin film characterization such as XRD, SE, AFM, SEM to access the structural, morphological, and electrical properties, and investigation of the performance of the PEALD seed layers compared to PVD techniques. The work is performed on an industrial scale cluster tool encompassing PEALD and PVD modules.
The project aims to demonstrate PEALD as an effective method for creating high-quality III/V nitride seed layers, significantly enhancing the performance and reliability of piezoelectric MEMS.