This master thesis focuses on the characterization of defects in a Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor. For this purpose, an optical experiment shall be set up to measure fluorescence from SiC-chips after laser excitation at cryogenic temperatures in a closed cycle He-cryostat. The work will involve working in a class-4 laser laboratory to set up the experiment and, subsequently, perform the measurements, first at room temperature and then in the cryostat. 

Your responsibilities will involve the following activities:

• Setting up of the experiment in the optical laboratory
• Working with fs-lasers and a He-cryostat 
• Perform the experiments
• Data analysis and presentation of results